Czochralski

English edit

From Polish Czochralski, a surname. Named after the inventor of the process, Jan Czochralski (1885–1953), Polish chemist.

Czochralski (uncountable)

(attributive, inorganic chemistry) Short for Czochralski process.
- 1999, Reinhard Krause-Rehberg, Hartmut S. Leipner, “Basics of Positron Annihilation in Semiconductors”, in Positron Annihilation in Semiconductors: Defect Studies (Springer Series in Solid-State Sciences; 127), Berlin: Springer, →ISBN, →ISSN, page 104:
  Mascher et al. (1989b) presented a correlated investigation of electron-irradiation-induced divacancies in silicon by positron annihilation, electron paramagnetic resonance (EPR), and infrared absorption. The defects were created by 2-MeV irradiation of Czochralski-grown Si at room temperature to a dose of 1×10¹⁸ cm^–2.
- 2011, Basant Agrawal, G. N. Tiwari, “Life Cycle Energy Analysis”, in Building Integrated Photovoltaic Thermal Systems: For Sustainable Developments (RSC Energy Series; 4), Cambridge: RSC Publishing, →ISBN, →ISSN, page 284:
  The energy required to produce electronic grade silicon (EG-Si) from MG-Si is 100 kWh kg^–1 and there is a 90% yield. The EG-Si is melted in a Czochralski crystal puller at 1400 °C and the silicon slowly crystallizes to form a single crystal ingot of silicon.

(This etymology is missing or incomplete. Please add to it, or discuss it at the Etymology scriptorium.)

Czochralski m pers (female equivalent Czochralska)

Declension of Czochralski